PTB20060 Specs and Replacement

Type Designator: PTB20060

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 330 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 930 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20207

 PTB20060 Substitution

- BJT ⓘ Cross-Reference Search

 

PTB20060 datasheet

NO PDF data!

Detailed specifications: PTB20030, PTB20031, PTB20038, PTB20046, PTB20050, PTB20051, PTB20052, PTB20053, BD136, PTB20062, PTB20071, PTB20074, PTB20077, PTB20078, PTB20081, PTB20082, PTB20091

Keywords - PTB20060 pdf specs

 PTB20060 cross reference

 PTB20060 equivalent finder

 PTB20060 pdf lookup

 PTB20060 substitution

 PTB20060 replacement