PTB20091 Datasheet and Replacement

   Type Designator: PTB20091
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 6.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 470 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 20212
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