PTB20097 Specs and Replacement

Type Designator: PTB20097

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 915 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M168

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PTB20097 datasheet

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Detailed specifications: PTB20071, PTB20074, PTB20077, PTB20078, PTB20081, PTB20082, PTB20091, PTB20095, TIP41C, PTB20101, PTB20105, PTB20110, PTB20111, PTB20125, PTB20134, PTB20135, PTB20141

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