PTB20125 Datasheet and Replacement

   Type Designator: PTB20125
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 14 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1800 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: 20225
      - BJT Cross-Reference Search