PTB20125 Specs and Replacement

Type Designator: PTB20125

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 400 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 14 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1800 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: 20225

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PTB20125 datasheet

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Detailed specifications: PTB20082, PTB20091, PTB20095, PTB20097, PTB20101, PTB20105, PTB20110, PTB20111, C945, PTB20134, PTB20135, PTB20141, PTB20144, PTB20145, PTB20146, PTB20147, PTB20148

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