PTB20146 Specs and Replacement

Type Designator: PTB20146

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1800 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: 20208

 PTB20146 Substitution

- BJT ⓘ Cross-Reference Search

 

PTB20146 datasheet

NO PDF data!

Detailed specifications: PTB20110, PTB20111, PTB20125, PTB20134, PTB20135, PTB20141, PTB20144, PTB20145, C5198, PTB20147, PTB20148, PTB20151, PTB20152, PTB20156, PTB20157, PTB20159, PTB20162

Keywords - PTB20146 pdf specs

 PTB20146 cross reference

 PTB20146 equivalent finder

 PTB20146 pdf lookup

 PTB20146 substitution

 PTB20146 replacement