PTB20159 Specs and Replacement
Type Designator: PTB20159
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 850 MHz
Collector Capacitance (Cc): 6.2 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: M118
PTB20159 Substitution
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PTB20159 datasheet
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Detailed specifications: PTB20145, PTB20146, PTB20147, PTB20148, PTB20151, PTB20152, PTB20156, PTB20157, BD140, PTB20162, PTB20165, PTB20166, PTB20167, PTB20169, PTB20170, PTB20171, PTB20173
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