PTB20167 Specs and Replacement
Type Designator: PTB20167
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 127 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 850 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: M169
PTB20167 Substitution
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PTB20167 datasheet
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Detailed specifications: PTB20151, PTB20152, PTB20156, PTB20157, PTB20159, PTB20162, PTB20165, PTB20166, TIP42C, PTB20169, PTB20170, PTB20171, PTB20173, PTB20174, PTB20175, PTB20176, PTB20177
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