PTB20176 Specs and Replacement

Type Designator: PTB20176

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 21 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1700 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M118

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PTB20176 datasheet

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Detailed specifications: PTB20166, PTB20167, PTB20169, PTB20170, PTB20171, PTB20173, PTB20174, PTB20175, 13003, PTB20177, PTB20179, PTB20181, PTB20183, PTB20187, PTB20189, PTB20191, PTB20193

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