PTB20177 Specs and Replacement

Type Designator: PTB20177

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 330 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 925 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20224

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PTB20177 datasheet

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Detailed specifications: PTB20167, PTB20169, PTB20170, PTB20171, PTB20173, PTB20174, PTB20175, PTB20176, 2SD1047, PTB20179, PTB20181, PTB20183, PTB20187, PTB20189, PTB20191, PTB20193, PTB20195

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