PTB20179 Specs and Replacement
Type Designator: PTB20179
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1800 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: 20227
PTB20179 Substitution
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PTB20179 datasheet
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Detailed specifications: PTB20169, PTB20170, PTB20171, PTB20173, PTB20174, PTB20175, PTB20176, PTB20177, 2SC2073, PTB20181, PTB20183, PTB20187, PTB20189, PTB20191, PTB20193, PTB20195, PTB20200
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