PTB20189 Specs and Replacement
Type Designator: PTB20189
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 11 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: 20227
PTB20189 Substitution
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PTB20189 datasheet
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Detailed specifications: PTB20174, PTB20175, PTB20176, PTB20177, PTB20179, PTB20181, PTB20183, PTB20187, S8550, PTB20191, PTB20193, PTB20195, PTB20200, PTB20202, PTB20204, PTB20206, PTB20216
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