R582 Datasheet. Specs and Replacement
Type Designator: R582 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
📄📄 Copy
R582 Substitution
- BJT ⓘ Cross-Reference Search
R582 datasheet
NO PDF data!
Detailed specifications: Q-15115C, Q-36A, Q5077A, Q5102, Q-591-8003, R3283, R340, R3608-1, D965, R7249, R7360, R7887, R8066, R8070, R8118, R8224, R8259
Keywords - R582 pdf specs
R582 cross reference
R582 equivalent finder
R582 pdf lookup
R582 substitution
R582 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032 | tip32c datasheet
