R8556 Datasheet. Specs and Replacement

Type Designator: R8556  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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R8556 datasheet

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Detailed specifications: R7887, R8066, R8070, R8118, R8224, R8259, R8305, R8552, TIP142, R8647, R8915, R8966, R9006, RCA1000, RCA1001, RCA120, RCA121

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