All Transistors. RCS31 Datasheet

 

RCS31 Datasheet and Replacement


   Type Designator: RCS31
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO66
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RCS31 Datasheet (PDF)

 0.1. Size:1481K  blue-rocket-elect
 brcs3134wa.pdf pdf_icon

RCS31

BRCS3134WA Rev.C Nov.-2023 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV, HF Product. / Applications

 0.2. Size:1784K  blue-rocket-elect
 brcs3139zk.pdf pdf_icon

RCS31

BRCS3139ZK Rev.A May.-2023 DATA SHEET / Descriptions DFN1006-3L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN1006-3L Plastic Package. / Features V =-20VI =-0.7AV =12V DS D GSRDS(on)@-4.5V520m(Type.390m) RDS(on)@-2.5V780m(Type.530m) RDS(on)@-1.8V1100m(Type.700m) ES

 0.3. Size:1349K  blue-rocket-elect
 brcs3134zk.pdf pdf_icon

RCS31

BRCS3134ZK Rev.C Feb.-2023 DATA SHEET / Descriptions DFN1006-3L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN1006-3L Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up t

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | AC160A | DTA123EET1G | ESM2060 | MP602 | 90T2 | SBC847CWT1G

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