RT5230 Specs and Replacement

Type Designator: RT5230

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO5

 RT5230 Substitution

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RT5230 datasheet

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Detailed specifications: RT3565, RT4761, RT484, RT497M, RT498M, RT5152, RT5202, RT5207, 2SC828, RT5402, RT5418, RT656M, RT657M, RT679M, RT69221, RT696M, RT697M

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