2N5130 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N5130

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO106

Datasheet: 2N5125 , 2N5126 , 2N5127 , 2N5128 , 2N5129 , 2N512A , 2N512B , 2N513 , 2N4401 , 2N5131 , 2N5132 , 2N5133 , 2N5134 , 2N5135 , 2N5136 , 2N5137 , 2N5138 .