2N5130 PDF and Equivalents Search

2N5130 Specs and Replacement

Type Designator: 2N5130

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO106

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2N5130 datasheet

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Detailed specifications: 2N5125, 2N5126, 2N5127, 2N5128, 2N5129, 2N512A, 2N512B, 2N513, 2SC4793, 2N5131, 2N5132, 2N5133, 2N5134, 2N5135, 2N5136, 2N5137, 2N5138

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