S1525 Specs and Replacement
Type Designator: S1525
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO98-2
S1525 Substitution
- BJT ⓘ Cross-Reference Search
S1525 datasheet
MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1m General Description Features The MDS1525 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and ... See More ⇒
Detailed specifications: S1381, S1382, S1383, S1420, S1423, S1429-3, S1502, S1516, A940, S1530, S15649, S1619, S1642, S1683, S1697, S1732, S1761A
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