S2121 Datasheet and Replacement
Type Designator: S2121
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
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S2121 Datasheet (PDF)
mrf7s21210h.pdf

Document Number: MRF7S21210HFreescale SemiconductorRev. 1, 1/2009Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF7S21210HR3Designed for CDMA base station applications with frequencies from 2110 toMRF7S21210HSR32170 MHz. Can be used in Class AB and Class C for all typical cellular basestation modulations. Typical Single -Carrie
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | BLV861 | SGSF321
Keywords - S2121 transistor datasheet
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History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | BLV861 | SGSF321



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