S2121 Datasheet, Equivalent, Cross Reference Search
Type Designator: S2121
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
S2121 Transistor Equivalent Substitute - Cross-Reference Search
S2121 Datasheet (PDF)
0.1. Size:458K freescale
mrf7s21210h.pdf
mrf7s21210h.pdf
Document Number: MRF7S21210HFreescale SemiconductorRev. 1, 1/2009Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF7S21210HR3Designed for CDMA base station applications with frequencies from 2110 toMRF7S21210HSR32170 MHz. Can be used in Class AB and Class C for all typical cellular basestation modulations. Typical Single -Carrie
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MMBT100A
