S2121 Specs and Replacement

Type Designator: S2121

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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S2121 datasheet

 0.1. Size:458K  freescale

 mrf7s21210h.pdf pdf_icon

S2121

Document Number MRF7S21210H Freescale Semiconductor Rev. 1, 1/2009 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 Designed for CDMA base station applications with frequencies from 2110 to MRF7S21210HSR3 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. Typical Single -Carrie... See More ⇒

Detailed specifications: S2000AF, S2000F, S2054, S2055, S2055A, S2055AF, S2055F, S2056, BC556, S2134, S21648, S2209, S2400A, S2401B, S2402B, S2427, S24598

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