All Transistors. S2121 Datasheet

 

S2121 Datasheet and Replacement


   Type Designator: S2121
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
 

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S2121 Datasheet (PDF)

 0.1. Size:458K  freescale
 mrf7s21210h.pdf pdf_icon

S2121

Document Number: MRF7S21210HFreescale SemiconductorRev. 1, 1/2009Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF7S21210HR3Designed for CDMA base station applications with frequencies from 2110 toMRF7S21210HSR32170 MHz. Can be used in Class AB and Class C for all typical cellular basestation modulations. Typical Single -Carrie

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SC4043 | RT484 | RT3TSSM | RT5N431C | RT3NXXM | 2SC4047 | RTAN140M

Keywords - S2121 transistor datasheet

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