S779T Specs and Replacement

Type Designator: S779T

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2800 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO236

 S779T Substitution

- BJT ⓘ Cross-Reference Search

 

S779T datasheet

NO PDF data!

Detailed specifications: S662T, S671T, S673T, S679T, S690T, S691T, S730T, S763T, 2SA1943, S790T, S791T, S876T, S879T, S920TS, S921TS, S922TS, S923TS

Keywords - S779T pdf specs

 S779T cross reference

 S779T equivalent finder

 S779T pdf lookup

 S779T substitution

 S779T replacement