SD4261 Specs and Replacement

Type Designator: SD4261

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: LCC2

 SD4261 Substitution

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SD4261 datasheet

 9.1. Size:116K  inchange semiconductor

 2sd425 2sd426.pdf pdf_icon

SD4261

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi... See More ⇒

 9.2. Size:208K  inchange semiconductor

 2sd426.pdf pdf_icon

SD4261

isc Silicon NPN Power Transistors 2SD426 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq... See More ⇒

Detailed specifications: SD2904A, SD2904AF, SD2907A, SD2907AF, SD3019F, SD3866A, SD3866AF, SD3960F, BD136, SD4261F, SD4957, SD4957F, SD5109, SD5109F, SD918, SD918F, SDM4001

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