SDM5010 Specs and Replacement
Type Designator: SDM5010
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
SDM5010 Substitution
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SDM5010 datasheet
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Detailed specifications: SDM4015, SDM4016, SDM4017, SDM5001, SDM5002, SDM5003, SDM5005, SDM5006, A1015, SDM5011, SDM5012, SDM5013, SDM5014, SDM5015, SDM5016, SDM5017, SDT9201
Keywords - SDM5010 pdf specs
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