SDM5013 Specs and Replacement
Type Designator: SDM5013
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
SDM5013 Substitution
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SDM5013 datasheet
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Detailed specifications: SDM5001, SDM5002, SDM5003, SDM5005, SDM5006, SDM5010, SDM5011, SDM5012, TIP3055, SDM5014, SDM5015, SDM5016, SDM5017, SDT9201, SDT9202, SDT9203, SDT9204
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