All Transistors. SE1001 Datasheet

 

SE1001 Datasheet and Replacement


   Type Designator: SE1001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO106
 

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SE1001 Datasheet (PDF)

 0.1. Size:470K  cn sino-ic
 se100150g.pdf pdf_icon

SE1001

SE100150GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =3.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 0.2. Size:399K  cn sino-ic
 se10015.pdf pdf_icon

SE1001

SE10015N-Channel MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =100VDSlow operation voltage. This device is R =67m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

 0.3. Size:289K  cn sino-ic
 se100130ga.pdf pdf_icon

SE1001

SE100130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =100VDScharge. R =4m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di

 0.4. Size:418K  cn sino-ic
 se100130a.pdf pdf_icon

SE1001

SE100130AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =3.0m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

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Datasheet: SDT9303 , SDT9304 , SDT9305 , SDT9306 , SDT9307 , SDT9308 , SDT9309 , SE0566 , 8050 , SE1002 , SE1022 , SE1730 , SE2001 , SE2002 , SE3001 , SE3002 , SE3005 .

History: OC614 | 40546 | 2SC1015 | KRA523T | BD262L | 2T665A9 | 2SD824A

Keywords - SE1001 transistor datasheet

 SE1001 cross reference
 SE1001 equivalent finder
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