SE4010 Specs and Replacement

Type Designator: SE4010

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO106

 SE4010 Substitution

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SE4010 datasheet

 9.1. Size:1265K  cn sino-ic

 se40120a.pdf pdf_icon

SE4010

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 9.2. Size:316K  cn sino-ic

 se40160a.pdf pdf_icon

SE4010

SE40160A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se... See More ⇒

 9.3. Size:901K  cn sino-ic

 se40150.pdf pdf_icon

SE4010

SE40150 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 40V DS Voltage and Current Improved Shoot-Through R = 1.9m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

Detailed specifications: SE1730, SE2001, SE2002, SE3001, SE3002, SE3005, SE4001, SE4002, 8550, SE5006, SE5020, SE5021, SE5022, SE5023, SE5024, SE5-0253, SE5050

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