All Transistors. SE8510 Datasheet

 

SE8510 Datasheet and Replacement


   Type Designator: SE8510
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 6 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5
 
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SE8510 Datasheet (PDF)

 9.1. Size:743K  cn sino-ic
 se85130ga.pdf pdf_icon

SE8510

SE85130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = 85VDSoperation voltage. This device is suitable for R =4.6m @ V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Datasheet: SE7005 , SE7055 , SE7056 , SE8001 , SE8002 , SE8010 , SE8041 , SE8042 , 2SC1740 , SE8520 , SE8521 , SE8541 , SE8542 , SE9300 , SE9301 , SE9302 , SE9400 .

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