SF334B Specs and Replacement
Type Designator: SF334B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: X13
SF334B Substitution
- BJT ⓘ Cross-Reference Search
SF334B datasheet
SSF3341 Main Product Characteristics D VDSS -30V G RDS(on) 42m (typ.) S ID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body ... See More ⇒
SSF3341L D DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON) ... See More ⇒
Detailed specifications: SF294, SF294B, SF295, SF295C, SF295D, SF310, SF314, SF334, 13007, SF335, SF335C, SF335D, SF367, SFT106, SFT107, SFT108, SFT115
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