All Transistors. SF334B Datasheet

 

SF334B Datasheet and Replacement


   Type Designator: SF334B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 0.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: X13
 

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SF334B Datasheet (PDF)

 9.1. Size:536K  silikron
 ssf3341.pdf pdf_icon

SF334B

SSF3341 Main Product Characteristics: DVDSS -30V G RDS(on) 42m (typ.) SID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.2. Size:381K  silikron
 ssf3341l.pdf pdf_icon

SF334B

SSF3341LDDESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

Datasheet: SF294 , SF294B , SF295 , SF295C , SF295D , SF310 , SF314 , SF334 , 2N3906 , SF335 , SF335C , SF335D , SF367 , SFT106 , SFT107 , SFT108 , SFT115 .

History: GC118 | BCW65BLT1 | NB212XG | BF405 | BCW81 | TN2715 | BCW93

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