2N5174 Specs and Replacement
Type Designator: 2N5174
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
2N5174 Substitution
- BJT ⓘ Cross-Reference Search
2N5174 datasheet
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2N5172 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Em... See More ⇒
2n5172 2n6076 mps5172 mps6076.pdf ![]()
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5157, 2N516, 2N5160, 2N5161, 2N5162, 2N517, 2N5172, 2N5173, MJE350, 2N5175, 2N5176, 2N5177, 2N5178, 2N5179, 2N518, 2N5180, 2N5181
Keywords - 2N5174 pdf specs
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History: DXT458P5
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