ST03 Specs and Replacement
Type Designator: ST03
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
ST03 Substitution
- BJT ⓘ Cross-Reference Search
ST03 datasheet
CRST037N10N,CRSS035N10N ( ) SkyMOS1 N-MOSFET 100V, 3m , 120A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on) typ 3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested ... See More ⇒
WST03P06 P-Channel MOSFET General Description Product Summery The WST30P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -60V 88m -3.5A for most of the small power switching and load switch applications. Applications The WST30P06 meet the RoHS and Green Prod uct requirement with ... See More ⇒
Detailed specifications: SS8550, SS9011, SS9012, SS9013, SS9014, SS9015, SS9016, SS9018, BD222, ST10, ST1026, ST1050, ST11, ST12, ST1290, ST13, ST14
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