ST150 Datasheet, Equivalent, Cross Reference Search
Type Designator: ST150
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
ST150 Transistor Equivalent Substitute - Cross-Reference Search
ST150 Datasheet (PDF)
0.1. Size:1274K jestek
jst150n30t2.pdf
jst150n30t2.pdf
JST150N30T230V,150AN-Channel MosfetFEATURESTO-252RDS(ON)2.6m @VGS=10V RDS(ON)3.4m @VGS=4.5VSimple Drive RequirementLow On-resistanceMARKING N-CHANNEL MOSFETYYXX Absolute Maximum Ratings (T =25 unless otherwise specified)CMax. Symbol Parameter UnitsTO-252-4RV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSST = 25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
