ST150 Specs and Replacement
Type Designator: ST150
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
ST150 Substitution
- BJT ⓘ Cross-Reference Search
ST150 datasheet
JST150N30T2 30V,150A N-Channel Mosfet FEATURES TO-252 RDS(ON) 2.6m @VGS=10V RDS(ON) 3.4m @VGS=4.5V Simple Drive Requirement Low On-resistance MARKING N-CHANNEL MOSFET YYXX Absolute Maximum Ratings (T =25 unless otherwise specified) C Max. Symbol Parameter Units TO-252-4R V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS T = 25... See More ⇒
Detailed specifications: ST10, ST1026, ST1050, ST11, ST12, ST1290, ST13, ST14, C1815, ST1504, ST1505, ST1523, ST1524, ST1525, ST1527, ST1528, ST153
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