ST33 Specs and Replacement
Type Designator: ST33
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO5
ST33 Substitution
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ST33 datasheet
WST3325 P-Ch MOSFET General Description Product Summery TheWST3325 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 42m -5.6A charge for most of the small power switching and load switch applications. Applications The WST3325 meet the RoHS and Green Product requirement , with full ... See More ⇒
WST3392 Dual N-Ch MOSFET General Description Product Summery The WST3392 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 3.7A 30V 40m density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST3392 meet the RoHS and Green Product requirement with full... See More ⇒
Detailed specifications: ST161, ST176, ST250, ST25C, ST29, ST30, ST31, ST32, 2N3906, ST34, ST3904, ST3906, ST40, ST400, ST401, ST4044, ST4045
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