All Transistors. ST6008 Datasheet

 

ST6008 Datasheet, Equivalent, Cross Reference Search


   Type Designator: ST6008
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 16 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO18

 ST6008 Transistor Equivalent Substitute - Cross-Reference Search

   

ST6008 Datasheet (PDF)

 0.1. Size:3678K  winsok
wst6008.pdf

ST6008 ST6008

WST6008 N-Ch MOSFETGeneral Description Product SummeryThe WST6008 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 140m 154mAgate charge for most of the small power switching and load switch applications. Applications The WST6008 meet the RoHS and Green Product requirement with full

 9.1. Size:56K  st
st600k.pdf

ST6008 ST6008

ST600KLOW VOLTAGE NPN POWER TRANSISTORPRELIMINARY DATAFeatures LOW SATURATION VOLTAGEApplications SCANNING VELOCITY MODULATION IN CRT DISPLAYS MEDIUM POWER LINEAR AND SWITCHING 1APPLICATIONS 23 SOT-32Description(TO-216)The ST600K is manufactured by low voltageEpitaxial Base technology and it is housed inSOT-32 plastic package. The complementaryPNP ty

 9.2. Size:1115K  winsok
wst6002.pdf

ST6008 ST6008

WST6002 N-Ch MOSFETGeneral Description Product SummeryThe WST6002 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 5 100mAfor most of the small power switching and load switch applications. Applications The WST6002 meet the RoHS and Green Product requirement with full func

 9.3. Size:546K  winsok
wst6003.pdf

ST6008 ST6008

WST6003 P-Ch MOSFETProduct SummeryFeatures D TrenchFETr Power MOSFET: 1.8-V RatedBVDSS RDSON ID D Gate-Source ESD Protected: 2000 VD High-Side Switching-20V 1200m -0.35AD Low On-Resistance: 1.2 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 14 nsApplications D S- Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirement

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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