ST63 Specs and Replacement
Type Designator: ST63
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
ST63 Substitution
- BJT ⓘ Cross-Reference Search
ST63 datasheet
ST631K LOW VOLTAGE PNP POWER TRANSISTOR PRELIMINARY DATA Features LOW SATURATION VOLTAGE Applications SCANNING VELOCITY MODULATION IN CRT DISPLAYS MEDIUM POWER LINEAR AND SWITCHING 1 APPLICATIONS 2 3 SOT-32 Description (TO-216) The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP ty... See More ⇒
KST63/64 Darlington Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCES Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current -500 mA PC Collector Power Dissipation 350 mW TSTG Storage Tem... See More ⇒
Detailed specifications: ST502, ST54, ST57, ST5771-1, ST5771-2, ST6008, ST6010, ST61, 8550, ST8033, ST8035, ST8065, ST8509, ST9, ST905, STC1725, STC1727
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