STC5080 Specs and Replacement
Type Designator: STC5080
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO5
STC5080 Substitution
- BJT ⓘ Cross-Reference Search
STC5080 datasheet
STC503D NPN Silicon Transistor Applications PIN Connection Power amplifier application High current switching application Features Power Transistor General Purpose application Low saturation voltage VCE(sat)=0.4V Typ. High Voltage VCEO=65V Min. TO-252 Ordering Information Type NO. Marking Package Code STC503D STC503 TO-252 Absolute Maximum ... See More ⇒
STC503F NPN Silicon Transistor PIN Connection Applications Power amplifier application High current switching application Features Power Transistor General Purpose application Low saturation voltage VCE(sat)=0.4V Typ. SOT-89 High Voltage VCEO=65V Min. Ordering Information Type NO. Marking Package Code C503 STC503F SOT-89 YWW Absolute Ma... See More ⇒
Detailed specifications: STC1734, STC1735, STC1737, STC1739, STC1751, STC1777, STC2100, STC2101, 2SC2240, STC5081, STC5082, STC5083, STC5084, STC5085, STC5550, STC5551, STC5552
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