All Transistors. STC5551 Datasheet

 

STC5551 Datasheet and Replacement


   Type Designator: STC5551
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO61
 

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STC5551 Datasheet (PDF)

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STC5551

STC5551FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 : VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51: DEVICE CODE, : hF

Datasheet: STC2101 , STC5080 , STC5081 , STC5082 , STC5083 , STC5084 , STC5085 , STC5550 , A1266 , STC5552 , STC5553 , STC5554 , STC5555 , STC5606 , STC5608 , STC5648 , STC5649 .

History: MUN2134T1G

Keywords - STC5551 transistor datasheet

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