2N520A PDF and Equivalents Search

 9.1. Size:277K  motorola

 2n5209 2n5210.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5209/D Amplifier Transistors NPN Silicon 2N5209 2N5210 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current C... See More ⇒

 9.2. Size:297K  motorola

 2n5208.pdf

... See More ⇒

 9.3. Size:208K  international rectifier

 2n681 2n5204.pdf

... See More ⇒

 9.4. Size:69K  central

 2n5209 2n5210.pdf

DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V... See More ⇒

 9.5. Size:1285K  sprague

 2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf

... See More ⇒

 9.6. Size:184K  inchange semiconductor

 2n5202.pdf

isc Silicon NPN Power Transistor 2N5202 DESCRIPTION Collector-emitter sustaining voltage V = 90V(Min) CEO(SUS) High saturation voltage Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as low-distortion power amplifiers,oscillators, ... See More ⇒