TA1614 Datasheet, Equivalent, Cross Reference Search
Type Designator: TA1614
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 95 °C
Transition Frequency (ft): 0.25 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
TA1614 Transistor Equivalent Substitute - Cross-Reference Search
TA1614 Datasheet (PDF)
vbta161k.pdf
001VBTA161Kwww.VBsemi.comN-Channel 60V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = 10 V60 330 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pFSOT-523 Fast Switching Speed: 25 nsSC-75 Low Input and Output Leakage TrenchFET Pow
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .