TA1796 Datasheet. Specs and Replacement

Type Designator: TA1796  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 120 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO9

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TA1796 datasheet

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TA1796

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50V IC -2A BTA1797M3 VCESAT(Max) -0.2V Description Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free ... See More ⇒

Detailed specifications: TA1767, TA1771, TA1772, TA1773, TA1778, TA1782, TA1783, TA1794, 2222A, TA1797, TA1798, TA1828, TA1829, TA1830, TA1846, TA1847, TA1860

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