TA1796 Datasheet, Equivalent, Cross Reference Search
Type Designator: TA1796
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 120 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO9
TA1796 Transistor Equivalent Substitute - Cross-Reference Search
TA1796 Datasheet (PDF)
9.1. Size:262K cystek
bta1797m3.pdf
bta1797m3.pdf
Spec. No. : C623M3 Issued Date : 2013.03.19 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50VIC -2ABTA1797M3VCESAT(Max) -0.2VDescription Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
