TA1829 Datasheet. Specs and Replacement
Type Designator: TA1829 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO33-1
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TA1829 datasheet
Preliminary Technical Information VDSS = 55 V IXTA182N055T7 TrenchMVTM ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒
Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒
Detailed specifications: TA1778, TA1782, TA1783, TA1794, TA1796, TA1797, TA1798, TA1828, 2SD669A, TA1830, TA1846, TA1847, TA1860, TA1861, TA1881, TA1882, TA1890
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