All Transistors. TA2514 Datasheet

 

TA2514 Datasheet and Replacement


   Type Designator: TA2514
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO3
 

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TA2514 Datasheet (PDF)

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TA2514

2STA2510High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo

Datasheet: TA2493 , TA2494 , TA2495 , TA2501 , TA2510 , TA2511 , TA2512 , TA2513 , 2SD718 , TA2551 , TA2606 , TA2616 , TA2658 , TA2714 , TA2735 , TA2736 , TA2761 .

History: BC319B | 2SA1668 | DTS721 | CHT5551GP | 2SA2088FRA | 2SD667A-C | 2SA638

Keywords - TA2514 transistor datasheet

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