2N5230 Datasheet and Replacement
Type Designator: 2N5230
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO46
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2N5230 Datasheet (PDF)
2n5232a.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5237s.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5232 a.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N52322N5232ATO-92Plastic PackageABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 70 VVEBOEmitter Base Voltage 5VICCollector Current 1
Datasheet: 2N5224 , 2N5225 , 2N5226 , 2N5227 , 2N5228 , 2N5229 , 2N522A , 2N523 , BC546 , 2N5231 , 2N5232 , 2N5232A , 2N5233 , 2N5234 , 2N5235 , 2N5236 , 2N5237 .
History: 2SA1370D | 2SA1253S | 2N5239 | 2N3834 | 2N142 | 2N1457 | 2N3570
Keywords - 2N5230 transistor datasheet
2N5230 cross reference
2N5230 equivalent finder
2N5230 lookup
2N5230 substitution
2N5230 replacement
History: 2SA1370D | 2SA1253S | 2N5239 | 2N3834 | 2N142 | 2N1457 | 2N3570



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