All Transistors. TBC847 Datasheet

 

TBC847 Datasheet and Replacement


   Type Designator: TBC847
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT23
 

 TBC847 Substitution

   - BJT ⓘ Cross-Reference Search

   

TBC847 Datasheet (PDF)

 ..1. Size:188K  toshiba
 tbc847.pdf pdf_icon

TBC847

TBC847Bipolar Transistors Silicon NPN Epitaxial TypeTBC847TBC847TBC847TBC8471. Applications1. Applications1. Applications1. Applications Low-Frequency Amplifiers2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit1. Base2. Emitter3. CollectorSOT233. Absolute Maximum Ratings (

Datasheet: TBC549 , TBC550 , TBC556 , TBC557 , TBC558 , TBC559 , TBC560 , TBC846 , 2SD313 , TBC848 , TBC849 , TBC850 , TBC856 , TBC857 , TBC858 , TBC859 , TBC860 .

History: BTB1236AL3 | BFS520 | CSA1012 | IMZ2AFRA | TBC849 | IT128 | BCX75-40

Keywords - TBC847 transistor datasheet

 TBC847 cross reference
 TBC847 equivalent finder
 TBC847 lookup
 TBC847 substitution
 TBC847 replacement

 

 
Back to Top

 


 
.