TBC847 Specs and Replacement

Type Designator: TBC847

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 110

Noise Figure, dB: -

Package: SOT23

 TBC847 Substitution

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TBC847 datasheet

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TBC847

TBC847 Bipolar Transistors Silicon NPN Epitaxial Type TBC847 TBC847 TBC847 TBC847 1. Applications 1. Applications 1. Applications 1. Applications Low-Frequency Amplifiers 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 1. Base 2. Emitter 3. Collector SOT23 3. Absolute Maximum Ratings (... See More ⇒

Detailed specifications: TBC549, TBC550, TBC556, TBC557, TBC558, TBC559, TBC560, TBC846, A1013, TBC848, TBC849, TBC850, TBC856, TBC857, TBC858, TBC859, TBC860

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