TBC848 Specs and Replacement

Type Designator: TBC848

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 110

Noise Figure, dB: -

Package: SOT23

 TBC848 Substitution

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TBC848 datasheet

 9.1. Size:188K  toshiba

 tbc847.pdf pdf_icon

TBC848

TBC847 Bipolar Transistors Silicon NPN Epitaxial Type TBC847 TBC847 TBC847 TBC847 1. Applications 1. Applications 1. Applications 1. Applications Low-Frequency Amplifiers 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 1. Base 2. Emitter 3. Collector SOT23 3. Absolute Maximum Ratings (... See More ⇒

Detailed specifications: TBC550, TBC556, TBC557, TBC558, TBC559, TBC560, TBC846, TBC847, 2SB817, TBC849, TBC850, TBC856, TBC857, TBC858, TBC859, TBC860, TBF869

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