All Transistors. TBC848 Datasheet

 

TBC848 Datasheet and Replacement


   Type Designator: TBC848
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT23
 

 TBC848 Substitution

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TBC848 Datasheet (PDF)

 9.1. Size:188K  toshiba
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TBC848

TBC847Bipolar Transistors Silicon NPN Epitaxial TypeTBC847TBC847TBC847TBC8471. Applications1. Applications1. Applications1. Applications Low-Frequency Amplifiers2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit1. Base2. Emitter3. CollectorSOT233. Absolute Maximum Ratings (

Datasheet: TBC550 , TBC556 , TBC557 , TBC558 , TBC559 , TBC560 , TBC846 , TBC847 , 2N4401 , TBC849 , TBC850 , TBC856 , TBC857 , TBC858 , TBC859 , TBC860 , TBF869 .

History: SN109 | SBP13003H | GC269 | AFY38 | BCP3904 | RN2324A | 2SD1354O

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