TBC848 Datasheet, Equivalent, Cross Reference Search
Type Designator: TBC848
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: SOT23
TBC848 Transistor Equivalent Substitute - Cross-Reference Search
TBC848 Datasheet (PDF)
9.1. Size:188K toshiba
tbc847.pdf
tbc847.pdf
TBC847Bipolar Transistors Silicon NPN Epitaxial TypeTBC847TBC847TBC847TBC8471. Applications1. Applications1. Applications1. Applications Low-Frequency Amplifiers2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit1. Base2. Emitter3. CollectorSOT233. Absolute Maximum Ratings (
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
