All Transistors. TBC849 Datasheet

 

TBC849 Datasheet and Replacement


   Type Designator: TBC849
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23
 

 TBC849 Substitution

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TBC849 Datasheet (PDF)

 9.1. Size:188K  toshiba
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TBC849

TBC847Bipolar Transistors Silicon NPN Epitaxial TypeTBC847TBC847TBC847TBC8471. Applications1. Applications1. Applications1. Applications Low-Frequency Amplifiers2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit1. Base2. Emitter3. CollectorSOT233. Absolute Maximum Ratings (

Datasheet: TBC556 , TBC557 , TBC558 , TBC559 , TBC560 , TBC846 , TBC847 , TBC848 , 2SB817 , TBC850 , TBC856 , TBC857 , TBC858 , TBC859 , TBC860 , TBF869 , TBF870 .

History: IMZ2AFRA | IT128 | BTB1236AL3 | BFS520 | BCX75-40 | BFS17 | CSA1012

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