TBC859 Specs and Replacement

Type Designator: TBC859

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

 TBC859 Substitution

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TBC859 datasheet

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Detailed specifications: TBC846, TBC847, TBC848, TBC849, TBC850, TBC856, TBC857, TBC858, 2N4401, TBC860, TBF869, TBF870, TBF871, TBF872, TD13002, TD13002SMD, TD13003

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