TD163-1 Specs and Replacement
Type Designator: TD163-1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO3
TD163-1 Substitution
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TD163-1 datasheet
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Detailed specifications: TD13005DSMD, TD13005SMD, TD162, TD162-1, TD162A, TD162B, TD162C, TD163, BD136, TD163A, TD163B, TD163C, TD264, TD264-1, TD264A, TD264B, TD264C
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