TD367B Specs and Replacement
Type Designator: TD367B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO3
TD367B Substitution
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TD367B datasheet
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Detailed specifications: TD265A, TD265B, TD265C, TD366, TD366A, TD366B, TD366C, TD367A, BC548, TD367C, TD643, TD644, TD645, TD646, TD647, TD648, TD649
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