All Transistors. TD649 Datasheet

 

TD649 Datasheet and Replacement


   Type Designator: TD649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 62.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
 

 TD649 Substitution

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TD649 Datasheet (PDF)

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Datasheet: TD367B , TD367C , TD643 , TD644 , TD645 , TD646 , TD647 , TD648 , 2N3906 , TD650 , TEC8012 , TEC8012D , TEC8012E , TEC8012F , TEC8012G , TEC8012H , TEC8013 .

History: 2SC1302 | MJE800T | MJ8100 | 2SD219 | ET709 | K8050S-B | RCA30A

Keywords - TD649 transistor datasheet

 TD649 cross reference
 TD649 equivalent finder
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