TD649 Specs and Replacement
Type Designator: TD649
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 62.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO3
TD649 Substitution
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TD649 datasheet
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Detailed specifications: TD367B, TD367C, TD643, TD644, TD645, TD646, TD647, TD648, 13007, TD650, TEC8012, TEC8012D, TEC8012E, TEC8012F, TEC8012G, TEC8012H, TEC8013
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