TI812 Datasheet. Specs and Replacement
Type Designator: TI812 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: 610A-03
📄📄 Copy
TI812 Substitution
- BJT ⓘ Cross-Reference Search
TI812 datasheet
NO PDF data!
Detailed specifications: TI804, TI805, TI806, TI807, TI808, TI809, TI810, TI811, 2SC945, TI813, TI814, TI815, TI876, TI884, TI885, TI886, TI887
Keywords - TI812 pdf specs
TI812 cross reference
TI812 equivalent finder
TI812 pdf lookup
TI812 substitution
TI812 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet | 2sc3281 datasheet | 2sa1106 | 2sb56
