TI887 Datasheet. Specs and Replacement

Type Designator: TI887  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO18

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TI887 datasheet

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Detailed specifications: TI812, TI813, TI814, TI815, TI876, TI884, TI885, TI886, 2N4401, TI888, TI890, TI891, TI896, TI897, TI898, TI899, TI903

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