All Transistors. TIP126 Datasheet

 

TIP126 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TIP126
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220

 TIP126 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP126 Datasheet (PDF)

 ..1. Size:39K  st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP126 TIP126

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32TI

 ..2. Size:69K  st
tip120 tip121 tip122 tip125 tip126 tip127.pdf

TIP126 TIP126

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32T

 ..3. Size:53K  st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP126 TIP126

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconEpitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.32The complement

 ..4. Size:219K  mcc
tip125 tip126 tip127.pdf

TIP126 TIP126

MCCMicro Commercial ComponentsTMTIP125/126/12720736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesSilicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy mee

 ..5. Size:2979K  jiangsu
tip120 tip121 tip122 tip125 tip126 tip127.pdf

TIP126 TIP126

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

 ..6. Size:690K  kexin
tip126.pdf

TIP126

DIP Type TransistorsPNP Darlington TransistorsTIP126 (KIP126)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-80V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54

 ..7. Size:213K  inchange semiconductor
tip126.pdf

TIP126 TIP126

isc Silicon PNP Darlington Power Transistor TIP126DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP121Minimum Lot-to-Lot variations for robust deviceperformance and re

 9.1. Size:251K  motorola
tip120re.pdf

TIP126 TIP126

Order this documentMOTOROLAby TIP120/DSEMICONDUCTOR TECHNICAL DATAPlastic Medium-PowerNPNTIP120*Complementary Silicon Transistors. . . designed for generalpurpose amplifier and lowspeed switching applications.TIP121* High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdcTIP122*VCEO(sus) = 60 Vdc (Min)

 9.2. Size:270K  st
tip122fp tip127fp.pdf

TIP126 TIP126

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGDESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPNpower transistor in monolithic Darlingtonconfiguration mounted in Jedec TO-220FP fully32molded isolated package. It is intented for use in1pow

 9.3. Size:29K  st
tip122fp tip127fp .pdf

TIP126 TIP126

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)DESCRIPTIONThe TIP122FP is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration Jedec TO-220FP fully moldedisolated package, intented for use in power linear32and switching a

 9.4. Size:45K  fairchild semi
tip122.pdf

TIP126 TIP126

TIP120/121/122Medium Power Linear Switching Applications Complementary to TIP125/126/127TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value UnitsVCBO Collector-Base Voltage : TIP120 60 V : TIP121 80 VB : TIP122 100 VVCEO Collector-Emitter Voltage :

 9.5. Size:44K  fairchild semi
tip121.pdf

TIP126 TIP126

TIP120/121/122Medium Power Linear Switching Applications Complementary to TIP125/126/127TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value UnitsVCBO Collector-Base Voltage : TIP120 60 V : TIP121 80 VB : TIP122 100 VVCEO Collector-Emitter Voltage :

 9.6. Size:45K  fairchild semi
tip125.pdf

TIP126 TIP126

TIP125/126/127Medium Power Linear Switching Applications Complementary to TIP120/121/122TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitSymbol Parameter Value UnitsC VCBO Collector-Base Voltage : TIP125 - 60 V : TIP126 - 80 V : TIP127 - 100 VB Collector-Emitter Voltag

 9.7. Size:53K  samsung
tip120.pdf

TIP126 TIP126

NPN EPITAXIALTIP120/121/122 DARLINGTON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complementary to TIP125/126/127ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V: TIP120 80 V: TIP121 100 V: TIP122 Collector-Emitter Voltage VCEO: TIP120 60 V: TIP121 80 V: TIP122 VEBO 100 V1.Base 2.Collector 3.Em

 9.8. Size:55K  samsung
tip125.pdf

TIP126 TIP126

PNP EPITAXIALTIP125/126/127 DARLINGTON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complement to TIP120/121/122ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V: TIP125 -80 V: TIP126 -120 V: TIP127 Collector Emitter Voltage: TIP125 VCEO -60 V: TIP126 -80 V: TIP127 -120 V1.Base 2.Collector 3.Emitter

 9.9. Size:408K  mcc
tip122.pdf

TIP126 TIP126

MCCTM Micro Commercial ComponentsTIP12220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 packageTransistors The complementary PNP types

 9.10. Size:521K  mcc
tip120 to-220.pdf

TIP126 TIP126

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthTIP120Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low collector-emitter saturation voltageNPN Epitaxial Amplifier applications-emitter shunt resistors TO-220 compact packageDarlington Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix de

 9.11. Size:21K  utc
tip122.pdf

TIP126 TIP126

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTORNPN EPITAXIAL TRANSISTORDESCRIPTIONThe UTC TIP122 is a NPN epitaxial transistor, designedfor use in general purpose amplifier low-speed switchingapplications.BCETO-220ABSOLUTE MAXIMUM RATINGS (Ta=25C)PARAMETER SYMBOL VALUE UNITStorage Temperature Ts -55 ~ +150 CJunction Temperature Tj 150 CTotal Power Dissipation PD 65

 9.12. Size:21K  utc
tip127.pdf

TIP126 TIP126

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTORPNP EPITAXIAL TRANSISTORDESCRIPTIONThe UTC TIP127 is a PNP epitaxial transistor, designedfor use in general purpose amplifier low-speed switchingapplications.BCETO-220ABSOLUTE MAXIMUM RATINGS (Ta=25C)PARAMETER SYMBOL VALUE UNITStorage Temperature Ts -55 ~ +150 CJunction Temperature Tj 150 CTotal Power Dissipation PD 65

 9.13. Size:66K  texas
tip120 tip121 tip122.pdf

TIP126 TIP126

IMPORTANT NOTICETexas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.TI warrants performance of its semiconductor products and related s

 9.14. Size:94K  cdil
tip122f 127f.pdf

TIP126 TIP126

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FPBCEDesigned for General-Purpose Amplifier and Low-Speed Switching Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage V

 9.15. Size:315K  cdil
tip120-127.pdf

TIP126 TIP126

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP120 TIP125TIP121 TIP126TIP122 TIP127NPN PNPTO-220Plastic PackageHigh Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION TIP120/125 TIP121/126 TIP122/127 UNITVCEO Collector Emitter Vol

 9.16. Size:1163K  jiangsu
tip127f.pdf

TIP126 TIP126

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASETIP127F DARLINGTON TRANSISTOR (PNP)2.COLLECTOR3.EMITTERFEATURES 1 2 3CPNP BMedium Power Complementary Silicon Transistors R 1R 2E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm

 9.17. Size:527K  jiangsu
tip122 tip127.pdf

TIP126 TIP126

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTERFEATURES2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

 9.18. Size:70K  kec
tip122.pdf

TIP126 TIP126

SEMICONDUCTOR TIP122TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=100V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50L

 9.19. Size:70K  kec
tip127.pdf

TIP126 TIP126

SEMICONDUCTOR TIP127TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=-120V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50

 9.20. Size:231K  lge
tip120 tip127.pdf

TIP126 TIP126

TIP120-TIP127 TO-220 Darlington Transistor TO-2201.BASE 2.COLLECTOR3.EMITTER 3 21FeaturesTIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

 9.21. Size:737K  wietron
tip120-21-22-25-26-27.pdf

TIP126 TIP126

TIP120 SeriesPNP/NPN Silicon Power TransistorP b Lead(Pb)-Free12 FEATURES:3* Medium Power Complementary silicon transistors 1. BASE2. COLLECTOR* TIP120,121,122 Darlington TRANSISTOR (NPN)3. EMITTER* TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220MAXIMUM RATINGS (TA=25 unless otherwise noted)TIP122TIP120 TIP121ParameterSymbolUnits TIP125 TIP126 TIP127

 9.22. Size:50K  hsmc
htip127.pdf

TIP126 TIP126

Spec. No. : HE6713HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP127PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP127 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

 9.23. Size:48K  hsmc
htip122.pdf

TIP126 TIP126

Spec. No. : HE6712HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP122 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

 9.24. Size:671K  jilin sino
tip122 tip127.pdf

TIP126 TIP126

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

 9.25. Size:442K  blue-rocket-elect
tip122l.pdf

TIP126 TIP126

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E

 9.26. Size:378K  blue-rocket-elect
tip127l.pdf

TIP126 TIP126

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E

 9.27. Size:515K  semtech
sttip122.pdf

TIP126 TIP126

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 5 ACollector Current IC 8 ACollector Current (Pulse) ICP 0.12 ABase Current IB

 9.28. Size:102K  first silicon
tip122-tip127 to220.pdf

TIP126 TIP126

TIP120,121,122SEMICONDUCTORTECHNICAL DATATIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN)TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURESMedium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

 9.29. Size:1358K  kexin
tip122.pdf

TIP126 TIP126

DIP Type TransistorsNPN Darlington TransistorsTIP122 (KIP122)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0

 9.30. Size:689K  kexin
tip127.pdf

TIP126

DIP Type TransistorsPNP Darlington TransistorsTIP127 (KIP127)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54

 9.31. Size:674K  kexin
tip120.pdf

TIP126

DIP Type TransistorsNPN Darlington TransistorsTIP120 (KIP120)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60 V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0

 9.32. Size:675K  kexin
tip121.pdf

TIP126

DIP Type TransistorsNPN Darlington TransistorsTIP121 (KIP121)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80 V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0

 9.33. Size:688K  kexin
tip125.pdf

TIP126

DIP Type TransistorsPNP Darlington TransistorsTIP125 (KIP125)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54

 9.34. Size:260K  lzg
tip127f 3ca127f.pdf

TIP126 TIP126

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122F(3DA122F) Features: Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

 9.35. Size:567K  lzg
tip122 3da122.pdf

TIP126 TIP126

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP127(3CA127) Features: Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

 9.36. Size:212K  lzg
tip127 3ca127.pdf

TIP126 TIP126

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122(3DA122) Features: Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

 9.37. Size:213K  inchange semiconductor
tip122.pdf

TIP126 TIP126

isc Silicon NPN Darlington Power Transistor TIP122DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP127Minimum Lot-to-Lot variations for robust deviceperformance and reliabl

 9.38. Size:213K  inchange semiconductor
tip127.pdf

TIP126 TIP126

isc Silicon PNP Darlington Power Transistor TIP127DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP122Minimum Lot-to-Lot variations for robust deviceperformance and r

 9.39. Size:217K  inchange semiconductor
tip122fp.pdf

TIP126 TIP126

isc Silicon NPN Darlington Power Transistor TIP122FPDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP127FPMinimum Lot-to-Lot variations for robust deviceperformance and rel

 9.40. Size:213K  inchange semiconductor
tip120.pdf

TIP126 TIP126

isc Silicon NPN Darlington Power Transistor TIP120DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP125Minimum Lot-to-Lot variations for robust deviceperformance and reliable

 9.41. Size:229K  inchange semiconductor
tip127b.pdf

TIP126 TIP126

isc Silicon PNP Darlington Power Transistor TIP127BDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP122BMinimum Lot-to-Lot variations for robust deviceperformance and

 9.42. Size:213K  inchange semiconductor
tip121.pdf

TIP126 TIP126

isc Silicon NPN Darlington Power Transistor TIP121DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP126Minimum Lot-to-Lot variations for robust deviceperformance and reliable

 9.43. Size:213K  inchange semiconductor
tip125.pdf

TIP126 TIP126

isc Silicon PNP Darlington Power Transistor TIP125DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP120Minimum Lot-to-Lot variations for robust deviceperformance and re

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
Back to Top